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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 65 V |
| Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 130mOhm @ 500mA, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.45 nC @ 5 V |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 52 pF @ 32.5 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
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|---|---|---|---|
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MOSFET N-CH 650V 9A TO220-3 |
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TK10V60W,LVQToshiba Electronic Devices and Storage Corporation |
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FDMC86183Sanyo Semiconductor/ON Semiconductor |
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AO4290AAlpha and Omega Semiconductor, Inc. |
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NX7002BKMBYLNexperia |
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STU7LN80K5STMicroelectronics |
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AOD11S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO252 |
In Stock: 6,911 $2.34000 |
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CSD18536KTTTexas Instruments |
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In Stock: 57 $5.26000 |
