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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss): | 900 V |
| Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 63mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id: | 4.4V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs: | 17.5 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 980 pF @ 600 V |
| FET Feature: | - |
| Power Dissipation (Max): | 119W (Tc) |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247-3 |
| Package / Case: | TO-247-3 |
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|---|---|---|---|
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BUK9Y19-55B,115Nexperia |
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NTD5867NLT4GSanyo Semiconductor/ON Semiconductor |
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SPD50P03LIR (Infineon Technologies) |
MOSFET P-CH 30V 50A TO252-5 |
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ZXMN10A07ZTAZetex Semiconductors (Diodes Inc.) |
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In Stock: 0 $0.63000 |
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2SK209-Y(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 10V 14MA SC59 |
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IPA083N10N5XKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 44A TO220-FP |
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STP2NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 1.85A TO220AB |
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VN2460N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 200MA TO243AA |
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BUK7516-55A,127NXP Semiconductors |
PFET, 65.7A I(D), 55V, 0.016OHM, |
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