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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 15 V |
| Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 30mOhm @ 1.5A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.93 nC @ 5 V |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 105 pF @ 6 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
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|---|---|---|---|
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MOSFET P-CH 30V 2.7A 6TSOP |
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R6020ENJTLROHM Semiconductor |
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CSD17382F4Texas Instruments |
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TSM2301ACX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
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