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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 1200 V |
| Current - Collector (Ic) (Max): | 30 A |
| Current - Collector Pulsed (Icm): | 60 A |
| Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 15A |
| Power - Max: | 160 W |
| Switching Energy: | 730µJ (on), 1.66mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 94 nC |
| Td (on/off) @ 25°C: | 30ns/200ns |
| Test Condition: | 960V, 15A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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FGA30T65SHDFairchild (ON Semiconductor) |
INSULATED GATE BIPOLAR TRANSISTO |
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IGBT, 20A, 600V, N-CHANNEL |
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IGP40N65H5IR (Infineon Technologies) |
IGP40N65 - DISCRETE IGBT WITHOUT |
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IRG4BC20WPBFIR (Infineon Technologies) |
IGBT, 13A, 600V, N-CHANNEL |
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HGT1S7N60A4DS9AFairchild (ON Semiconductor) |
IGBT, 34A, 600V, N-CHANNEL |
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APT150GN60B2GRoving Networks / Microchip Technology |
IGBT 600V 220A 536W SOT227 |
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IGTM10N50A |
N CHANNEL IGBT FOR SWITCHING APP |
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FGAF20N60SMDSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 40A TO3PF |
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IGW15T120IR (Infineon Technologies) |
IGW15T120 - DISCRETE IGBT WITHOU |
In Stock: 9,030 $1.99000 |
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IHW40T120FKSA1IR (Infineon Technologies) |
IGBT, 75A, 1200V, N-CHANNEL |
In Stock: 9,120 $5.05000 |
