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| Type | Description |
|---|---|
| Series: | XPT™, GenX3™ |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | PT |
| Voltage - Collector Emitter Breakdown (Max): | 650 V |
| Current - Collector (Ic) (Max): | 32 A |
| Current - Collector Pulsed (Icm): | 62 A |
| Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 10A |
| Power - Max: | 160 W |
| Switching Energy: | 300µJ (on), 200µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 20 nC |
| Td (on/off) @ 25°C: | 17ns/125ns |
| Test Condition: | 400V, 10A, 50Ohm, 15V |
| Reverse Recovery Time (trr): | 29 ns |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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STGW100H65FB2-4STMicroelectronics |
TRENCH GATE FIELD-STOP, 650 V, 1 |
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IRG8P50N120 - DISCRETE IGBT WITH |
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IKW75N65ES5XKSA1IR (Infineon Technologies) |
IGBT TRENCH 650V 80A TO247-3 |
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SGP5N60RUFDTUFairchild (ON Semiconductor) |
N-CHANNEL IGBT |
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FGA15N120FTDTUFairchild (ON Semiconductor) |
IGBT, 30A, 1200V, N-CHANNEL |
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IGBT 600V 60A 187W TO247-3 |
In Stock: 4 $3.19000 |
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IKW40N60H3IR (Infineon Technologies) |
IKW40N60 - DISCRETE IGBT WITH AN |
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NGTB30N120FL2WGSanyo Semiconductor/ON Semiconductor |
INSULATED GATE BIPOLAR TRANSISTO |
In Stock: 3,694 $4.79000 |
