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BCR192E6327HTSA1

BCR192E6327HTSA1

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Manufacturer Part
BCR192E6327HTSA1
Manufacturer
IR (Infineon Technologies)
Description
BIPOLAR DIGITAL TRANSISTOR
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-
InStock
2073
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Bulk
Part Status:Last Time Buy
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3

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