| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 40mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 4.5 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 1.1W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-TSOP |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
![]() |
AOD4C60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO252 |
In Stock: 0 $0.00000 |
![]() |
IPB60R230P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16.8A TO263-3 |
In Stock: 0 $0.00000 |
![]() |
NVMFS5C673NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
In Stock: 0 $0.00000 |
![]() |
IPD65R950CFDBTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.9A TO252-3 |
In Stock: 0 $0.00000 |
![]() |
STB25NM60NDSTMicroelectronics |
MOSFET N-CH 600V 21A D2PAK |
In Stock: 0 $0.00000 |
![]() |
IRLZ44NSPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 47A D2PAK |
In Stock: 0 $0.00000 |
![]() |
IRL3715LPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 54A TO262 |
In Stock: 0 $0.00000 |
![]() |
IPI037N06L3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO262-3 |
In Stock: 0 $0.00000 |
![]() |
RJK0454DPB-00#J5Renesas Electronics America |
MOSFET N-CH 40V 40A LFPAK |
In Stock: 0 $0.00000 |
![]() |
NTD4906NAT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.3A/54A DPAK |
In Stock: 0 $0.00000 |