Type | Description |
---|---|
Series: | QFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 75mOhm @ 15.5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 72 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3900 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 180W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
AON6270Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 31.5A/85A 8DFN |
In Stock: 0 $0.00000 |
![]() |
SI6466ADQ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6.8A 8TSSOP |
In Stock: 0 $0.00000 |
![]() |
IRFSL4615PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 33A TO262 |
In Stock: 0 $0.00000 |
![]() |
2SK1119(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 1000V 4A TO220AB |
In Stock: 0 $0.00000 |
![]() |
STE250NS10STMicroelectronics |
MOSFET N-CH 100V 220A ISOTOP |
In Stock: 0 $0.00000 |
![]() |
SPB07N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO263-3 |
In Stock: 0 $0.00000 |
![]() |
NVB190N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A D2PAK-3 |
In Stock: 0 $0.00000 |
![]() |
SIA430DJ-T4-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12A/12A PPAK |
In Stock: 0 $0.00000 |
![]() |
APT15F60SMicrosemi |
MOSFET N-CH 600V 16A D3PAK |
In Stock: 0 $0.00000 |
![]() |
IPI100N08N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 70A TO262-3 |
In Stock: 0 $0.00000 |