| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 650 V |
| Current - Average Rectified (Io): | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 4 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 170 µA @ 650 V |
| Capacitance @ Vr, F: | 125pF @ 1V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220AC |
| Operating Temperature - Junction: | 175°C (Max) |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
![]() |
1N4003GPSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
In Stock: 0 $0.00000 |
![]() |
FGP20D-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
In Stock: 0 $0.00000 |
![]() |
HFA105NH60RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 105A HALFPAK |
In Stock: 0 $0.00000 |
![]() |
CRG03(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 400V 1A SFLAT |
In Stock: 0 $0.00000 |
![]() |
VS-8ETL06PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
In Stock: 0 $0.00000 |
![]() |
IDH02SG120XKSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 1200V 2A TO220-2 |
In Stock: 0 $0.00000 |
![]() |
ES3JHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AB |
In Stock: 0 $0.00000 |
![]() |
DB2G42900L1Panasonic |
DIODE SCHOTTKY 40V 1A 0402 |
In Stock: 0 $0.00000 |
![]() |
SSB44HE3/52TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AA |
In Stock: 0 $0.00000 |
![]() |
RSX301LA-30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 3A PMDT |
In Stock: 0 $0.00000 |