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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | NPT |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 38 A |
| Current - Collector Pulsed (Icm): | - |
| Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 25A |
| Power - Max: | 125 W |
| Switching Energy: | 1.1mJ (on), 600µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 140 nC |
| Td (on/off) @ 25°C: | - |
| Test Condition: | 300V, 25A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | 50 ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | i4-Pac™-5 |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IGBT 3 CHIP 600V WAFER |
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IGBT 410V 12A 125W DPAK-3 |
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IGBT 3 CHIP 600V WAFER |
In Stock: 0 $0.00000 |
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RJP65T54DPM-E0#T2Renesas Electronics America |
IGBT TRENCH TO-3FP |
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IGBT 3 CHIP 600V WAFER |
In Stock: 0 $0.00000 |
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IGBT 650V 30A TO-3PF |
In Stock: 0 $0.00000 |
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IGBT 390V 20A 125W DPAK-3 |
In Stock: 0 $0.00000 |
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INSULATED GATE BIPOLAR TRANSISTO |
In Stock: 0 $0.00000 |
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IGC54T65R3QEX1SA1IR (Infineon Technologies) |
IGBT CHIP |
In Stock: 0 $0.00000 |
