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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 500 mA |
| Voltage - Collector Emitter Breakdown (Max): | 200 V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max): | 250nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 30mA, 10V |
| Power - Max: | 625 mW |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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MJD350T4GSanyo Semiconductor/ON Semiconductor |
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2N6123NTE Electronics, Inc. |
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2SC39390RAPanasonic |
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