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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bag |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 10 A |
| Voltage - Collector Emitter Breakdown (Max): | 60 V |
| Vce Saturation (Max) @ Ib, Ic: | 8V @ 3.3A, 10A |
| Current - Collector Cutoff (Max): | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
| Power - Max: | 90 W |
| Frequency - Transition: | 2MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AB, TO-127-3 |
| Supplier Device Package: | TO-127 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SMALL SIGNAL BIPOLAR TRANSISTOR |
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POWER FIELD-EFFECT TRANSISTOR, 1 |
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2SB1216S-TL-ESanyo Semiconductor/ON Semiconductor |
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BCW68GE6327HTSA1IR (Infineon Technologies) |
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NTE101NTE Electronics, Inc. |
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In Stock: 12 $10.32000 |
