HN1B04FE-GR,LF price Datasheet Toshiba Electronic Devices and Storage Corporation| in-fortune.com

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Manufacturer Part: HN1B04FE-GR,LF

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS NPN/PNP 50V 0.15A ES6

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - Arrays

InStock: 18721

Datasheets Online: HN1B04FE-GR,LF PDF

HN1B04FE-GR,LFNotice

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Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):150mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:100mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6

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Returning / warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment，please contact customer service for a return authorization. Parts should be unused and in original packaging. Customer has to take charge for the shipping.
Returning / warranty	Warranty	All InFortune purchases come with a 30-day money-back return policy, plus a 90-day InFortune warranty against any manufacturing defects. This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation

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