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| Type | Description |
|---|---|
| Series: | * |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1000 V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 460mOhm @ 11.5A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 154 nC @ 10 V |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 4350 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | Chassis Mount |
| Supplier Device Package: | ISOTOP® |
| Package / Case: | SOT-227-4, miniBLOC |
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|---|---|---|---|
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TK14E65W5,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A TO220 |
In Stock: 210 $3.20000 |
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HUF75332P3 |
MOSFET N-CH 55V 60A TO220-3 |
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SISH114ADN-T1-GE3Vishay / Siliconix |
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NTA4001NT1GSanyo Semiconductor/ON Semiconductor |
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IPW50R280CEIR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
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