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| Type | Description |
|---|---|
| Series: | SuperFET® III |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 72mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 82 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 312W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247-3 |
| Package / Case: | TO-247-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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SQ3427AEEV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
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MOSFET N-CH 800V 17A TO220AB |
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NTB25P06T4Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
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DMTH6005LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 90A TO252-4L |
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FDD10N20LZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK |
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FQU1N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 1A IPAK |
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FQPF18N50V2SDTUFairchild (ON Semiconductor) |
N-CHANNEL POWER MOSFET |
In Stock: 4,950 $1.41000 |
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IPD26N06S2L35ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO252-3 |
In Stock: 0 $0.22000 |
