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| Type | Description |
|---|---|
| Series: | DeepGATE™, STripFET™ VI |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 25mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 3.6 nC @ 4.5 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 283 pF @ 24 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.6W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-6 |
| Package / Case: | SOT-23-6 |
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|---|---|---|---|
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CSD25483F4TTexas Instruments |
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IPW65R190CFD7AXKSA1IR (Infineon Technologies) |
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IPB45P03P4L11ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 45A TO263-3-2 |
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PSMN2R5-60PL127NXP Semiconductors |
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23A, 100V, 0.084OHM, N-CHANNEL M |
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IPD50R800CEBTMA1IR (Infineon Technologies) |
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