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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
| Rds On (Max) @ Id, Vgs: | 100mOhm @ 1.5A, 5V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 5 V |
| Vgs (Max): | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 870 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.3W (Ta) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
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|---|---|---|---|
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MOSFET N-CH 100V 4.2A TO252-3 |
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IRLU8729-701PBFInternational Components Corp. |
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RM20N650TIRectron USA |
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DMN67D7L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 210MA SOT23-3 |
In Stock: 0 $0.03478 |
