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| Type | Description |
|---|---|
| Series: | TrenchFET® Gen IV |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 12.7A (Ta), 18.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 9.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 41 nC @ 10 V |
| Vgs (Max): | +16V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1620 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.3W (Ta), 4.8W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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|---|---|---|---|
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SIHFPS40N50L-GE3Vishay / Siliconix |
POWER MOSFET SUPER-247, 100 M @ |
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APT1001RBVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 11A TO247 |
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RM130N100T2Rectron USA |
MOSFET N-CH 100V 130A TO220-3 |
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EPC2034EPC |
GANFET N-CH 200V 48A DIE |
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IXTF200N10TWickmann / Littelfuse |
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IPI041N12N3GAKSA1IR (Infineon Technologies) |
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SIHLL110TR-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
In Stock: 0 $0.23870 |
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IPW60R105CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21A TO247-3 |
In Stock: 68 $5.64000 |
