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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250 V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 46mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4480 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 46W (Tc) |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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IXTT440N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 440A TO268 |
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IPZ60R099P6FKSA1IR (Infineon Technologies) |
PFET, 600V, 0.099OHM, 1-ELEMENT, |
In Stock: 0 $3.07000 |
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BSF024N03LT3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 15A/106A 2WDSON |
In Stock: 5,000 $1.15000 |
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IPD90R1K2C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 900V 5.1A TO252-3 |
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IRFI640GPBFVishay / Siliconix |
MOSFET N-CH 200V 9.8A TO220-3 |
In Stock: 47 $2.27000 |
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TSM2302CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 3.9A SOT23 |
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STP7NK80ZFPSTMicroelectronics |
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SPD30N03S2L20GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
In Stock: 20,000 $0.31000 |
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IRLR2905PBFInternational Components Corp. |
HEXFET POWER MOSFET |
In Stock: 0 $0.28000 |
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IPD06N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-3 |
In Stock: 210 $0.76000 |
