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| Type | Description |
|---|---|
| Series: | UniFET™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 66mOhm @ 19.5A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 49 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2130 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 251W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220-3 |
| Package / Case: | TO-220-3 |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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NTE66NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 14A TO220 |
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IXTA150N15X4Wickmann / Littelfuse |
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SPW11N80C3FKSA1IR (Infineon Technologies) |
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SSP4N90AFairchild (ON Semiconductor) |
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TK17E65W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 17.3A TO220 |
In Stock: 0 $2.59380 |
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SISS70DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 125V 8.5A/31A PPAK |
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SIHP28N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 28A TO220AB |
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SI3127DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 3.5A/13A 6TSOP |
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SCH1439-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 3.5A 6SCH |
In Stock: 159,639 $0.12000 |
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NTD14N03RGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 2.5A DPAK |
In Stock: 0 $0.12000 |
