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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 200mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 61 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 150W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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MOSFET N-CH 250V 15A TO252-3 |
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IPD60R600P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO252-3 |
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HUF75842P3Fairchild (ON Semiconductor) |
MOSFET N-CH 150V 43A TO220-3 |
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MOSFET N-CH 100V 7.3A PWRDI5060 |
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NP36P06SLG-E1-AYRenesas Electronics America |
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IRF840ASTRLPBFVishay / Siliconix |
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In Stock: 1 $2.31000 |
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R6008FNXROHM Semiconductor |
MOSFET N-CH 600V 8A TO-220FM |
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IPD80R2K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 2.5A TO252-3 |
In Stock: 193 $0.94000 |
