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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Rds On (Max) @ Id, Vgs: | 52mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id: | 5.6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs: | 107 nC @ 18 V |
| Vgs (Max): | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1337 pF @ 800 V |
| FET Feature: | - |
| Power Dissipation (Max): | 262W |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247-4L |
| Package / Case: | TO-247-4 |
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|---|---|---|---|
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IRLR3636PBFInternational Components Corp. |
MOSFET N-CH 60V 50A DPAK |
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IRFSL7534PBFIR (Infineon Technologies) |
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SQS423EN-T1_GE3Vishay / Siliconix |
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SIHG70N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 70A TO247AC |
In Stock: 94 $13.40000 |
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IRF5801TRPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 600MA MICRO6 |
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APT11N80BC3GRoving Networks / Microchip Technology |
MOSFET N-CH 800V 11A TO247 |
In Stock: 211 $3.49000 |
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MCH3479-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.5A SC70 |
In Stock: 0 $0.11128 |
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BSZ014NE2LS5IFATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 31A/40A TSDSON |
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R6004JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 4A LPTS |
In Stock: 1,095 $2.03000 |
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RSS060P05FRATBROHM Semiconductor |
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In Stock: 3,868 $1.03000 |
