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| Type | Description |
|---|---|
| Series: | * |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 600mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 650 nC @ 10 V |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 9500 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-264 [L] |
| Package / Case: | TO-264-3, TO-264AA |
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|---|---|---|---|
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TK14E65W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A TO220 |
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IPW65R190CFDFKSA1IR (Infineon Technologies) |
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HUF75639S3 |
MOSFET N-CH 100V 56A I2PAK |
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AOW7S60Alpha and Omega Semiconductor, Inc. |
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BSC061N08NS5ATMA1IR (Infineon Technologies) |
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IPB049N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 80A D2PAK |
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