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| Type | Description |
|---|---|
| Series: | G3R™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Rds On (Max) @ Id, Vgs: | 192mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id: | 2.69V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 15 V |
| Vgs (Max): | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 730 pF @ 800 V |
| FET Feature: | - |
| Power Dissipation (Max): | 128W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263-7 |
| Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|---|---|---|---|
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2SK1589-T1B-ARenesas Electronics America |
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FCH104N60FSanyo Semiconductor/ON Semiconductor |
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SI7812DN-T1-GE3Vishay / Siliconix |
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IRFR110TRLPBFVishay / Siliconix |
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IPB65R095C7ATMA2IR (Infineon Technologies) |
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In Stock: 1,995 $5.96000 |
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CSD18510KCSTexas Instruments |
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In Stock: 346 $2.35000 |
