Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | SuperMESH3™ |
| Package: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.3Ohm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs: | 33 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 880 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 110W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I-PAK |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
5HP01M-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 70MA 3MCP |
In Stock: 828,000 $0.09000 |
 |
IRFR3711ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 93A DPAK |
In Stock: 4,205 $1.11000 |
 |
EPC2215EPC |
GAN TRANS 200V 8MOHM BUMPED DIE |
In Stock: 9,074 $6.12000 |
 |
FQPF6N80CT |
MOSFET N-CH 800V 5.5A TO220F |
In Stock: 757 $2.17000 |
 |
IPA60R450E6XKSA1IR (Infineon Technologies) |
PFET, 600V, 0.45OHM, 1-ELEMENT, |
In Stock: 7,500 $0.73000 |
 |
TK31V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A 4DFN |
In Stock: 0 $4.78500 |
 |
SIR836DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 21A PPAK SO-8 |
In Stock: 7,155 $0.87000 |
 |
SISS61DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 30.9/111.9A PPAK |
In Stock: 0 $1.04000 |
 |
IPB60R299CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO263-3 |
In Stock: 18,790 $1.16000 |
 |
SUM65N20-30-E3Vishay / Siliconix |
MOSFET N-CH 200V 65A TO263 |
In Stock: 162 $4.44000 |
