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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 8.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 180mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 5 V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 440 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 30W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB Full-Pak |
| Package / Case: | TO-220-3 Full Pack |
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|---|---|---|---|
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TK39J60W5,S1VQToshiba Electronic Devices and Storage Corporation |
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2SK2512-AZRenesas Electronics America |
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MOSFET P-CH 20V 9.4A 6MICROFET |
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MOSFET N-CH 200V 19A TO252 |
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BSS606 - 250V-600V SMALL SIGNAL |
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