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| Type | Description |
|---|---|
| Series: | QFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 300 V |
| Current - Continuous Drain (Id) @ 25°C: | 2.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 3.7Ohm @ 1.05A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 5 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 130 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 3.13W (Ta), 40W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I2PAK (TO-262) |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|---|---|---|---|
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STFI15NM65NSTMicroelectronics |
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IXTP340N04T4Wickmann / Littelfuse |
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MOSFET N-CH 1200V 200MA TO252 |
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CMSN3416K-HFComchip Technology |
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In Stock: 0 $0.08800 |
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SQJ840EP-T1_GE3Vishay / Siliconix |
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RM002N30DFRectron USA |
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IPB042N03LGATMA1IR (Infineon Technologies) |
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IPS80R900P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO251-3 |
In Stock: 0 $0.62143 |
