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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 24 V |
| Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.65mOhm @ 195A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 240 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7.59 pF @ 24 V |
| FET Feature: | - |
| Power Dissipation (Max): | 300W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|---|---|---|---|
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MOSFET N-CH 40V 35A DPAK |
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BSC021N08NS5ATMA1IR (Infineon Technologies) |
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FDD6770AFairchild (ON Semiconductor) |
24A, 25V, 0.004OHM, N-CHANNEL , |
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TP2510N8-GRoving Networks / Microchip Technology |
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AOI7N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO251A |
In Stock: 0 $0.49896 |
