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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 40mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 700 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 68W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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MOSFET N-CH 800V 1.5A TO220F |
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TSM260P02CX6 RFGTSC (Taiwan Semiconductor) |
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UPA2520T1H-T2-ATRenesas Electronics America |
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In Stock: 9,000 $0.71000 |
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RQ3E180GNTBROHM Semiconductor |
MOSFET N-CH 30V 18A 8HSMT |
In Stock: 3,000 $0.65000 |
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SIR882DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
In Stock: 7,100 $2.63000 |
