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| Type | Description |
|---|---|
| Series: | QFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150 V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 90mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 105 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3320 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 294W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3PN |
| Package / Case: | TO-3P-3, SC-65-3 |
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|---|---|---|---|
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STN3N40K3STMicroelectronics |
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NDD03N40Z-1GSanyo Semiconductor/ON Semiconductor |
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MOSFET N-CH 560V 9A TO247-3 |
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DMTH3004LK3-13Zetex Semiconductors (Diodes Inc.) |
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In Stock: 0 $0.44492 |
