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| Type | Description |
|---|---|
| Series: | NexFET™ |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 59mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.3 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 454 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.8W (Ta), 23W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-VSONP (3x3.15) |
| Package / Case: | 8-PowerVDFN |
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|---|---|---|---|
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IXFH20N100PWickmann / Littelfuse |
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RQ5E030AJTCLROHM Semiconductor |
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IPI60R165CPAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO262-3 |
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