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| Type | Description |
|---|---|
| Series: | STripFET™ II |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V, 5V |
| Rds On (Max) @ Id, Vgs: | 14mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 66 nC @ 4.5 V |
| Vgs (Max): | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 110W (Tc) |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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IAUC100N04S6N022ATMA1 |
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IRF9Z14LPBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A I2PAK |
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MOSFET N-CH 40V 31A PWRDI5060 |
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MOSFET N-CH 1000V 10A TO247AD |
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PFET, 31A I(D), 55V, 0.044OHM, 1 |
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