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| Type | Description |
|---|---|
| Series: | DTMOSIV |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800 V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 290mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 850µA |
| Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2050 pF @ 300 V |
| FET Feature: | - |
| Power Dissipation (Max): | 45W (Tc) |
| Operating Temperature: | 150°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220SIS |
| Package / Case: | TO-220-3 Full Pack |
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|---|---|---|---|
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IRFS7730-7PPBFInternational Components Corp. |
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MOSFET N-CH 50V 50A TO252 |
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STI6N62K3STMicroelectronics |
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TN0604N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
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STR1P2UH7STMicroelectronics |
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IPD90N06S407ATMA2IR (Infineon Technologies) |
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FDB8444TSFairchild (ON Semiconductor) |
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IMW65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
In Stock: 235 $26.89000 |
