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| Type | Description |
|---|---|
| Series: | POWER MOS 8™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1000 V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 440mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 260 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 8500 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1040W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | T-MAX™ [B2] |
| Package / Case: | TO-247-3 Variant |
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RM150N100T2Rectron USA |
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FQD3N60CTM-WSSanyo Semiconductor/ON Semiconductor |
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