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| Type | Description |
|---|---|
| Series: | DTMOSIV |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 15.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 190mOhm @ 7.9A, 10V |
| Vgs(th) (Max) @ Id: | 3.7V @ 790µA |
| Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1350 pF @ 300 V |
| FET Feature: | Super Junction |
| Power Dissipation (Max): | 130W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
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SQS460ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 8A PPAK1212-8W |
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APT17F100BRoving Networks / Microchip Technology |
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FDMS86101DCSanyo Semiconductor/ON Semiconductor |
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NDB4060LFairchild (ON Semiconductor) |
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STW9N150STMicroelectronics |
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