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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 470mOhm @ 900mA, 4.5V |
| Vgs(th) (Max) @ Id: | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 1.3 nC @ 4.5 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 41 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 350mW (Ta), 5.43W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DFN1006B-3 |
| Package / Case: | 3-XFDFN |
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DMTH10H010SCTZetex Semiconductors (Diodes Inc.) |
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TPS1100DRTexas Instruments |
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RM12N100LDRectron USA |
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MOSFET N-CH 600V 12A TO220-3 |
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