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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 60mOhm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 930 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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IRF8714PBFInternational Components Corp. |
MOSFET N-CH 30V 14A 8SO |
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2N7002H6327XTSA2IR (Infineon Technologies) |
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NTTFS4824NTAGSanyo Semiconductor/ON Semiconductor |
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NTD3055L170Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
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PSMN3R0-30MLC,115Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
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APT5024SLLG/TRRoving Networks / Microchip Technology |
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TK65S04N1L,LQToshiba Electronic Devices and Storage Corporation |
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FDN336PSanyo Semiconductor/ON Semiconductor |
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POWER FIELD-EFFECT TRANSISTOR, 3 |
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SSM3J351R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 3.5A SOT-23F |
In Stock: 308 $0.45000 |
