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| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 16mOhm @ 11A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.5 nC @ 5 V |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 420 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
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BSC0901NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
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AOTF25S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 25A TO220-3F |
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IRFPS3810PBFInternational Components Corp. |
MOSFET N-CH 100V 170A SUPER-247 |
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PSMN4R8-100PSEQNexperia |
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IRFM120AFairchild (ON Semiconductor) |
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BUZ11-NR4941Sanyo Semiconductor/ON Semiconductor |
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BSS223PWL6327IR (Infineon Technologies) |
SMALL SIGNAL P-CHANNEL MOSFET |
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NTHS5441T1Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.9A CHIPFET |
In Stock: 62,812 $0.14000 |
