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| Type | Description |
|---|---|
| Series: | GigaMOS™ HiPerFET™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 360A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 2.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs: | 525 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 33000 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1250W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-264AA (IXFK) |
| Package / Case: | TO-264-3, TO-264AA |
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|---|---|---|---|
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AOT2142LAlpha and Omega Semiconductor, Inc. |
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FDB5680Fairchild (ON Semiconductor) |
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2SJ328-AZRenesas Electronics America |
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IRLZ24SPBFVishay / Siliconix |
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TPH2R408QM,L1QToshiba Electronic Devices and Storage Corporation |
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FDMC8554Sanyo Semiconductor/ON Semiconductor |
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SCT50N120STMicroelectronics |
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