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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250 V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 125W |
| Operating Temperature: | - |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-204AE |
| Package / Case: | TO-204AE |
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|---|---|---|---|
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AUIRF5210STRLIR (Infineon Technologies) |
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SPI08N50C3IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
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FDS86106Sanyo Semiconductor/ON Semiconductor |
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DMN2005UFGQ-7Zetex Semiconductors (Diodes Inc.) |
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In Stock: 4,000 $0.41503 |
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CSD23203WTTexas Instruments |
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IRF9233International Components Corp. |
MOSFET P-CH 150V 5.5A TO204AE |
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SIHF12N60E-GE3Vishay / Siliconix |
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SIHU3N50D-E3Vishay / Siliconix |
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