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| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150 V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 50mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 1.9W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® SO-8 |
| Package / Case: | PowerPAK® SO-8 |
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|---|---|---|---|
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IPS65R1K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 4.3A TO251 |
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CSD18535KCSTexas Instruments |
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ZXMN2F34FHTAZetex Semiconductors (Diodes Inc.) |
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TK090A65Z,S4XToshiba Electronic Devices and Storage Corporation |
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AUIRF3007International Components Corp. |
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RQ3G100GNTBROHM Semiconductor |
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