Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 480 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.8W (Ta), 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
RQ6C065BCTCRROHM Semiconductor |
MOSFET P-CH 20V 6.5A TSMT6 |
In Stock: 2 $0.73000 |
![]() |
PSMN3R0-60BS,118Nexperia |
MOSFET N-CH 60V 100A D2PAK |
In Stock: 789 $2.30000 |
![]() |
FQA90N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 90A TO3PN |
In Stock: 3,248 $1.46000 |
![]() |
IPD60R180C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A TO252-3 |
In Stock: 2,465 $2.97000 |
![]() |
IMW65R107M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
In Stock: 409 $6.80000 |
![]() |
TPH3202LDTransphorm |
GANFET N-CH 600V 9A 4PQFN |
In Stock: 0 $11.11000 |
![]() |
CPH3324-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.2A 3CPH |
In Stock: 27,000 $0.09000 |
![]() |
BUK9Y12-40E,115Nexperia |
MOSFET N-CH 40V 52A LFPAK56 |
In Stock: 3,018 $0.54000 |
![]() |
SIHD7N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 7A DPAK |
In Stock: 267 $2.10000 |
![]() |
NTJS4160NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.8A SC88/SC70-6 |
In Stock: 637,216 $0.07000 |