Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | HEXFET®, StrongIRFET™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 75 V |
| Current - Continuous Drain (Id) @ 25°C: | 87A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 7.2mOhm @ 52A, 10V |
| Vgs(th) (Max) @ Id: | 3.7V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 126 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4430 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 140W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | IPAK (TO-251) |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Image | Part Number | Description | Stock / Unit Price |
|---|---|---|---|
 |
AOSP32320CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8.5A 8SOIC |
In Stock: 2,859 $0.57000 |
 |
STB11NM80T4STMicroelectronics |
MOSFET N-CH 800V 11A D2PAK |
In Stock: 3,987 $6.87000 |
 |
NTE2991NTE Electronics, Inc. |
MOSFET PWR N-CH 55V 110A TO-220 |
In Stock: 41 $3.46000 |
 |
IPD600N25N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 25A TO252-3 |
In Stock: 4,347 $2.90000 |
 |
FQB5N60CTMFairchild (ON Semiconductor) |
4.5A, 600V, 2OHM, N CHANNEL , D2 |
In Stock: 9,768 $0.55000 |
 |
NTD80N02-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 80A IPAK |
In Stock: 527,401 $0.42000 |
 |
APT1201R6BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A TO247 |
In Stock: 0 $14.80000 |
 |
NVD5117PLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 11A/61A DPAK |
In Stock: 48,168 $1.15000 |
 |
IPB015N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 180A TO263-7 |
In Stock: 2,222 $6.96000 |
 |
IRF2804SPBFIR (Infineon Technologies) |
HEXFET POWER MOSFET |
In Stock: 0 $1.09000 |
