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| Type | Description |
|---|---|
| Series: | aMOS5™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 700 V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 360mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 22.5 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1360 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 29.5W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220F |
| Package / Case: | TO-220-3 Full Pack |
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|---|---|---|---|
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IXTH110N10L2Wickmann / Littelfuse |
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CSD17301Q5ATexas Instruments |
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STW46NF30STMicroelectronics |
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HUF76429D3Fairchild (ON Semiconductor) |
N-CHANNEL POWER MOSFET |
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TK72E12N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 120V 72A TO-220 |
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PSMN012-100YLXNexperia |
MOSFET N-CH 100V 85A LFPAK56 |
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MOSFET N-CH 650V 4.5A TO263-3-2 |
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