Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 26mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 162 nC @ 18 V |
Vgs (Max): | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3315 pF @ 520 V |
FET Feature: | - |
Power Dissipation (Max): | 420W (Tc) |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | HiP247™ |
Package / Case: | TO-247-3 |
Image | Part Number | Description | Stock / Unit Price |
---|---|---|---|
![]() |
DMP21D5UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 700MA 3DFN |
In Stock: 51,061 $0.40000 |
![]() |
TSM7P06CP ROGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 60V 7A TO252 |
In Stock: 1,103 $0.53000 |
![]() |
SQD40081EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252AA |
In Stock: 1,064 $1.30000 |
![]() |
UF3C120150K3SUnitedSiC |
SICFET N-CH 1200V 18.4A TO247-3 |
In Stock: 596 $10.63000 |
![]() |
STO36N60M6STMicroelectronics |
MOSFET N-CH 600V 30A TOLL |
In Stock: 1,667 $5.19000 |
![]() |
FCH072N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 52A TO247-3 |
In Stock: 731 $6.53000 |
![]() |
TSM024NA04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 170A 8PDFN |
In Stock: 4,893 $1.69000 |
![]() |
NTB75N06GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
In Stock: 800 $1.26000 |
![]() |
FDMS86200Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 9.6A/35A 8PQFN |
In Stock: 2,147,483,647 $1.96000 |
![]() |
IPT60R125G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20A 8HSOF |
In Stock: 1,497 $4.45000 |