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| Type | Description |
|---|---|
| Series: | SIPMOS® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 600mOhm @ 3.5A, 5V |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 840 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 40W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO220-3 |
| Package / Case: | TO-220-3 |
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|---|---|---|---|
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APT7F100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 7A TO247 |
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MOSFET N-CH 900V 3.6A TO220-3 |
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SIHD3N50D-E3Vishay / Siliconix |
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RM180N60T2Rectron USA |
MOSFET N-CH 60V 180A TO220-3 |
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RTL020P02TRROHM Semiconductor |
MOSFET P-CH 20V 2A TUMT6 |
In Stock: 3,853 $0.62000 |
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IRF242International Components Corp. |
MOSFET N-CH 200V 16A TO3 |
In Stock: 277 $1.56000 |
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IPB60R125CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3-2 |
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MOSFET N-CH 560V 21A TO263-3 |
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MOSFET N-CH 800V 13A TO220 |
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STS5P3LLH6STMicroelectronics |
MOSFET P-CH 30V 5A 8SO |
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