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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Rds On (Max) @ Id, Vgs: | 25mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 157 nC @ 18 V |
| Vgs (Max): | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 390W (Tc) |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | HiP247™ |
| Package / Case: | TO-247-3 |
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