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| Type | Description |
|---|---|
| Series: | TrenchMOS™ |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 113mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 10.4 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 601 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 45W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Package / Case: | SC-100, SOT-669 |
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|---|---|---|---|
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2SK3457-AZRenesas Electronics America |
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IPI111N15N3GAKSA1IR (Infineon Technologies) |
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AOW11N60Alpha and Omega Semiconductor, Inc. |
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AON6276Alpha and Omega Semiconductor, Inc. |
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