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| Type | Description |
|---|---|
| Series: | HiPerFET™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250 V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 12mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs: | 122 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7870 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 520W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3P |
| Package / Case: | TO-3P-3, SC-65-3 |
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|---|---|---|---|
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IRF343International Components Corp. |
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SISS10ADN-T1-GE3Vishay / Siliconix |
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EPC2219EPC |
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NVTFS6H854NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.5A/44A 8WDFN |
In Stock: 0 $0.39371 |
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BUK7Y153-100EXNexperia |
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TJ60S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
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In Stock: 3,813 $1.48000 |
