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| Type | Description |
|---|---|
| Series: | CoolMOS™ |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 23.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 160mOhm @ 11.3A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 750µA |
| Gate Charge (Qg) (Max) @ Vgs: | 75 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1.66 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 34W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO220-FP |
| Package / Case: | TO-220-3 Full Pack |
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|---|---|---|---|
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IRF740ALPBFVishay / Siliconix |
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IXFT16N120PWickmann / Littelfuse |
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AOD296AAlpha and Omega Semiconductor, Inc. |
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FDZ493PFairchild (ON Semiconductor) |
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FDD6782AFairchild (ON Semiconductor) |
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APT10090SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 12A D3PAK |
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AOWF4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO262F |
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BF1005SE6327IR (Infineon Technologies) |
RF N-CHANNEL MOSFET |
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STW70N60DM2STMicroelectronics |
MOSFET N-CH 600V 66A TO247 |
In Stock: 485 $11.00000 |
